Excimer laser crystallization of microcrystalline silicon for TFTs on flexible substrate
Source abstract
Abstract
Abstract Microcrystalline silicon (μc-Si) films have been deposited on PDMS as well as on PEN substrate. Excimer laser annealing was used to improve the crystalline structure and so to obtain high mobility TFTs. The effect of the laser annealing on the crystalline structure of silicon films is studied using different characterization techniques and discussed. Mobility values of 60 cm 2 /V s with PDMS and 46 cm 2 /V s with PEN are obtained.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · CCD and CMOS Imaging Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (6)
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