Crystal growth in (GeS2)x(Sb2S3)1−x thin films
Source abstract
Abstract
The isothermal crystal growth kinetics of Sb2S3 in (GeS2)(x)(Sb2S3)(1 - x) thin films (x = 0.1, 0.2 and 0.3) has been investigated by static and high speed optical microscopy in a wide temperature range of 480-625 K allowing measurement of growth rates over four orders of magnitude. The formed crystals developed linearly with time, which is associated with crystal growth controlled by liquid-crystal interface kinetics. The appropriate growth model was derived from the dependence of reduced crystal growth rate on undercooling of the system, indicating that the 2D surface nucleated growth model is operative in this particular case. Thermodynamic and kinetic aspects are discussed. (C) 2014 Elsevier B.V. All rights reserved.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Mineralogy and Gemology Studies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (49)
Show source-provided references
1. Phase change materials and their application to nonvolatile memories10.1021/cr900040x ↗
2. Phase-change materials for rewriteable data storage10.1038/nmat2009 ↗
3. Elliott · 2006
4. Applications of chalcogenide glasses in electronics and optoelectronics: a review
5. Thermal analysis of non-isothermal crystallization kinetics in glass forming liquids10.1016/0022-3093(79)90169-8 ↗
6. Applications of thermoanalytical techniques to the study of crystallization kinetics in glass-forming liquids, part I: theory10.1016/0022-3093(83)90069-8 ↗
7. Interpretation of crystallization kinetics results provided by DSC10.1016/j.tca.2011.10.005 ↗
8. A novel method to study crystallization of glasses10.1016/j.tca.2010.07.026 ↗
9. The crystallization kinetics of Sb2S3 in (GeS2)0.4(Sb2S3)0.6 glass10.1002/pssc.201000771 ↗
10. Effect of composition on electrical and structural characterization of SXTeXSe100−2X amorphous alloys10.1016/0025-5416(84)90029-6 ↗
11. Electrical conductivity and crystallization kinetics in Te–Se glassy system10.1063/1.4712625 ↗
12. In situ transmission electron microscopy study of the crystallization of Ge2Sb2Te510.1063/1.1636259 ↗
13. In-situ TEM study of the crystallization of thin films composed of Sb3.6Te with Ge
14. Growth rate determination through automated TEM image analysis: crystallization studies of doped SbTe phase-change thin films10.1017/S1431927610000176 ↗
15. Crystallization behavior in Se90Te10 and Se80Te20 thin films10.1063/1.4869547 ↗
16. Viscosity and crystallization kinetics of As2Se310.1016/0022-3093(84)90205-9 ↗
17. Crystallization kinetics in amorphous and glassy materials
18. Network structure in GeS2–Sb2S3 chalcogenide glasses: raman spectroscopy and phase transformation study10.1021/jp208614j ↗
19. On the crystallization of Sb2S3 in glassy (GeS2)0.3(Sb2S3)0.710.1007/BF00720262 ↗
20. The kinetic-analysis of the crystallization processes in glasses10.1016/0040-6031(91)87032-R ↗
21. Kinetics of crystal growth of Sb2S3 in (GeS2)0.3(Sb2S3)0.7 glass10.1016/j.jnoncrysol.2006.02.048 ↗
22. The non-isothermal crystallization kinetics of Sb2S3 in the (GeS2)0.2(Sb2S3)0.8 glass10.1016/j.tca.2005.08.002 ↗
23. The particle size influence on crystallization kinetics of (GeS2)0.1(Sb2S3)0.9 glass10.1016/j.tca.2007.10.008 ↗
24. Crystallization behavior of (GeS2)0.1(Sb2S3)0.9 glass10.1016/j.jnoncrysol.2008.01.029 ↗
25. A crystallization study of the Ge25Sb20S55 glassy alloy10.1007/BF00588303 ↗
26. DSC study of some Ge–Sb–S glasses10.1007/BF00557163 ↗
27. Crystallization kinetics of Ge0.3Sb1.4S2.7 glass10.1016/0040-6031(95)02653-3 ↗
28. Crystallization kinetics by thermal analysis10.1023/A:1010106206509 ↗
29. Crystal growth kinetics in (GeS2)0.2(Sb2S3)0.8 glass10.1016/j.tca.2006.05.013 ↗
30. Crystal growth kinetics of Sb2S3 in Ge–Sb–S amorphous thin films10.1007/s10973-011-2171-8 ↗
31. Nucleation and growth in amorphous thin films of (GeS2)0.9(Sb2S3)0.110.1016/j.jcrysgro.2013.07.037 ↗
32. Correlations between properties of chalcogenide glasses. I. The system germanium–antimony–sulfur10.1002/zaac.19764190202 ↗
33. Germanium–antimony–sulfur system semiconducting glasses
34. Flow, diffusion and crystallization of supercooled liquids: revisited10.1063/1.480752 ↗
35. Crystal growth from the melt: a review
36. Crystal growth in glass-forming systems — a review
37. On the nature of crystal growth from the melt10.1016/0022-0248(67)90003-6 ↗
38. Barták · 2014
39. The enthalpies of formation of SbF5(I) and Sb2S3(C) and the high-temperature thermodynamic functions of Sb2S3(C) and Sb2S3(I)10.1016/0021-9614(81)90063-X ↗
40. Shánělová · 2001
41. Viscosity of (GeS2)x(Sb2S3)1−x supercooled melts10.1016/j.jnoncrysol.2006.06.026 ↗
42. The solid–liquid interface
43. Refinement of the crystal structure of stibnite Sb2S310.1524/zkri.1972.135.3-4.308 ↗
44. Formation of crystal nuclei in liquid metals10.1063/1.1699435 ↗
45. Phase changes10.1016/S0081-1947(08)60134-4 ↗
46. Crystallization kinetics of lead metasilicate10.1016/0022-3093(82)90175-2 ↗
47. Kinetics of crystal nucleation in silicate-glasses10.1016/0022-3093(85)90372-2 ↗
48. Crystal growth kinetics exhibit a fragility-dependent decoupling from viscosity10.1063/1.2815325 ↗
49. Does viscosity describe the kinetic barrier for crystal growth from the liquidus to the glass transition?10.1063/1.3490793 ↗