journal article·2012-09Open access

Dangling bonds in amorphous silicon investigated by multifrequency EPR

M. Fehr, A. Schnegg, B. Rech, K. Lips, O. Astakhov, F. Finger, C. Freysoldt, R. Bittl, C. Teutloff

Journal of Non-Crystalline Solids· Volume 358· Issue 17

Abstract

Paramagnetic coordination defects in undoped hydrogenated amorphous silicon (a-Si:H) are studied using multifrequency pulsed electron-paramagnetic resonance (EPR) spectroscopy at S-, X-, Q- and W-band microwave frequencies (3.6, 9.7, 34, and 94 GHz, respectively). The improved spectral information extractable from a multifrequency fitting procedure allows us to conclude that the g tensor exhibits a rhombic splitting instead of axial symmetry. Our methods allow for precise and accurate determination of the g tensor principal values gx = 2.0079(2), gy = 2.0061(2) and gz = 2.0034(2) and their distribution parameters (g strain).
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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Electron Spin Resonance Studies · Magneto-Optical Properties and Applications

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