Thickness effect on the optical properties of Bi/As2S3 bilayer thin films

Abstract The optical properties of bilayer thin films of Bi/As 2 S 3 with various thicknesses which were prepared from Bi and As 2 S 3 by thermal evaporation technique under high vacuum were characterized by Fourier Transformed Infrared Spectroscopy, X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The prepared bilayer films of 905 nm, 910 nm and 915 nm thickness have As 2 S 3 as bottom layer (900 nm) and Bi as top layer (5,10,15 nm). X-ray diffraction studies confirm the amorphous nature of the prepared films. The optical properties show a strong dependence on the film thickness. It was found that the optical band gap increases with film thickness. The obtained lower values of Urbach energy indicate that as thickness increases, more ordered films can be produced. The reduction in disorder in bonding network is amply supported by the way of increase in band gap, increase in Tauc parameter ( B 1/2 ) and reduction in Urbach energy from the analysis of transmittance spectra. The change in XPS core level spectra and Raman spectra also shows the changes due to thickness.