Electrical and corrosion properties of the Ti5Si3 thin films coated on glass substrate by APCVD method
Source abstract
Abstract
Abstract Ti5Si3 thin films were coated on glass substrate by atmospheric pressure chemical vapor deposition method at different temperatures. Electrical and corrosion properties of the thin films were investigated. The results show that the electrical resistivity of the thin films decreases initially with the increase in deposition temperature. However, it increases with the further increase of the temperature. The lowest electrical resistivity of 107 μΩ⋅cm is obtained at 710 °C. The least corrosion rates of the thin films at 95 °C of 0.10 nm/min and 0.13 nm/min in 1 N and 10 N acid solution and of 0.33 nm/min and 6.55 nm/min in 1 N and 10 N alkali solution, respectively, are obtained by weight-loss measurement method. The corrosion mechanisms of the thin films were also discussed in detail.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and interfaces · Chalcogenide Semiconductor Thin Films · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (24)
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