High quality amorphous–crystalline silicon heterostructure prepared by grid-biased remote radio-frequency plasma enhanced chemical vapor deposition
Source abstract
Abstract
Abstract Very high effective minority carrier lifetime (6.3 ms) and very low surface recombination velocity (2.6 cm/s) have been demonstrated on float-zone 1–2 Ω cm crystalline silicon (c-Si) wafers by depositing a-Si:H films using grid-biased remote radio-frequency plasma enhanced chemical vapor deposition (RF PECVD). This method employs a semi-transparent DC biased-grid within the conventional RF PECVD configuration. The DC-biased grid is positioned between the RF electrodes in order to develop a remote plasma and thus allow control of the flux and type of precursors involved in the growth of hydrogenated amorphous silicon (a-Si:H) film. It is shown that compared to conventional RF diode, the grid-biased remote RF PECVD method produces a-Si:H films with superior passivating properties as well as significantly lower concentrations of void and SiH 2 bonding and a lower overall hydrogen content, all of which contribute to a higher quality a-Si:H–c-Si heterostructure.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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