Photoluminescence of Si nanocrystallites in different types of matrices

Abstract This paper presents the comparative investigation of photoluminescence (PL) and its temperature dependence for rf-magnetron co-sputtered Si-enriched SiOx systems and amorphous Si films prepared by hot-wire CVD method with Si nanocrystallites of different sizes. It is shown that PL spectra of Si–SiOx films consist of the five PL bands peaked at 1.30, 1.50, 1.76, 2.05 and 2.32 eV. Amorphous Si films with Si nanocrystallites are characterized by three PL bands only peaked at 1.35, 1.50 and 1.76 eV. The peak position of the 1.50 eV PL band shifts with the change of Si quantum dot sizes and it is attributed to exciton recombination inside of Si quantum dots. The nature of four other PL bands is discussed as well.