Crystallization behavior of (GeS2)0.1(Sb2S3)0.9 glass

Abstract The crystal growth kinetics of antimony trisulfide in (GeS2)0.1(Sb2S3)0.9 glass has been studied by microscopy and DSC. The linear crystal growth kinetics has been confirmed in the temperature range 492 ⩽ T ⩽ 515 K (EG = 405 ± 7 kJ mol−1). The applicability of standard growth models has been assessed. From the crystal growth rate corrected for viscosity plotted as a function of undercooling it has been found that the most probable mechanism is interface controlled 2D nucleated growth. The non-isothermal DSC data, corresponding to the bulk sample, can be described by the Johnson–Mehl–Avrami equation.