Fast hydrogen diffusion in hydrogenated amorphous silicon observed by in situ ESR

Abstract A high diffusion coefficient (> 10 −10 cm 2 s −1 ) of free H atoms in hydrogenated amorphous silicon (a-Si:H) has been observed using in situ electron spin resonance (ESR). The experimental results show that dual H-diffusion paths for free-H diffusion and H inter-diffusion exist in an a-Si:H network. The light-soaking effect in a-Si:H is discussed in relation to these dual H-diffusion paths.