Electrical switching behavior of bulk Si15Te85−Sb chalcogenide glasses – A study of compositional dependence
Source abstract
Abstract
Studies on the electrical switching behavior of melt quenched bulk Si15Te85-xSbx glasses have been undertaken in the composition range (1 <= x <= 10), in order to understand the effect of Sb addition on the electrical switching behavior of Si15Te85-x base glass. It has been observed that all the Si15Te85-xSbx glasses studied exhibit a smooth memory type switching. Further, the switching voltages are found to decrease almost linearly with Sb content, which indicates that the metallicity of the dopant plays a dominant role in this system compared to network connectivity/rigidity. The thickness dependence of switching voltage (V-th) indicates a clear thermal origin for the switching mechanism. The temperature variation of switching voltages reveals that the Si15Te85-xSbx glasses studied have a moderate thermal stability. (C) 2009 Elsevier B.V. All rights reserved.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Glass properties and applications · Metallic Glasses and Amorphous Alloys
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (35)
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