Electron beam creation of metastable defects in hydrogenated amorphous silicon: hydrogen collision model
Source abstract
Abstract
Abstract Metastable dangling bond (DB) creation during keV electron-beam irradiation of hydrogenated amorphous silicon (a-Si:H) is explained with the H collision model of light-induced metastability and several physically reasonable assumptions. Each incident electron creates an electron–hole pair every nm as it traverses the sample, resulting in a 1-nm-radius ‘hot tube’ extending from the front to the back surface of a film
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Glass properties and applications
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References (22)
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