Properties of a-Sb Se1− photoconductors

We have examined the thermal stability, and carrier drift mobilities and lifetimes (and hence electron and hole ranges) of a-SbxSe1−x photoconductors. We have found that the most thermally stable a-SbxSe1−x alloys can be obtained for x between 1 and 1.5 at.% which therefore limits the amount of Sb that can be added to improve the X-ray absorption and hence the X-ray photoconductivity of these alloys. On the other hand, we have found that the photoconducting films fabricated from a-SbxSe1−x alloys exhibit better electron and hole ranges when compared with the starting pure a-Se material. The X-ray sensitivity of a-Se:1 at.% Sb is greater than that of the pure a-Se.