Dielectric relaxation and morphologic properties of CaCu3Ti4O12 doped with GeO2

Abstract CaCu 3 Ti 4 O 12 (CCTO) is a material with giant dielectric constant, presenting good stability over a wide temperature and frequency ranges. The preparation method and doping has a great influence on the microstructure and dielectric properties of this material. In this work, doping CCTO with 2–10 wt% GeO 2 has been shown to increase the dielectric constant. We studied the prepared samples by X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance spectroscopy. X-ray diffraction shows the presence of nanocristals. Grains and grain boundaries compositions have been observed by scanning electron microscopy with energy dispersive X-ray spectrometry mapping. Impedance spectroscopy measurements, in the frequency range from 75 kHz to 30 MHz, and temperature from 250 to 325 K, have been performed. The data were analyzed using the Cole–Cole model of dielectric relaxation.