Changes in electrical and structural properties of phase-change Ge-Sb-Te films by Zr addition
Source abstract
Abstract
Abstract In this paper, the effect of Zr on the phase change properties of Ge 2 Sb 2 Te 5 (GST) is systemically studied for phase-change random access memory. The sheet resistance ratio between amorphous and crystalline states achieves four to five orders of magnitude. The crystalline resistance, crystallization temperature ( T c ) and the 10 years data-retention of Zr-GST films increase with the Zr concentration. Zr-GST films are crystallized into a single phase without phase separation due to the Zr bonding with Sb and Te. With the increasing annealing temperature, the transformation from face-centered cubic (fcc) to hexagonal is suppressed when the Zr atomic content is higher than 6%, which is ascribed to the lack formation of the Te-Te pairs. The wide band gap of the amorphous Zr-GST films is favorable to reduce the threshold current. The incorporating Zr atoms are embedded in the inner atomic-scale structure of the GST, which contributes to performance improvement of the GST material for phase-change random access memory.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Liquid Crystal Research Advancements · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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