journal article·2002-04

Evidence of nanophase separation in Ge–Se glasses

Yong Wang, Kouhei Tanaka, Toshiyuki Nakaoka, Kazuo Murase

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Abstract

Abstract Nanophase separation of two structural units, ethane-like Ge 2 (Se 1/2 ) 6 and Ge(Se 1/2 ) 4 tetrahedra, in Ge x Se 1− x ( x =0.30–0.37) glasses has been investigated by Raman scattering measurements in a temperature range 300–1000 K. For x 2 (Se 1/2 ) 6 ethane-like units induce an additional stress to the backbone of Ge(Se 1/2 ) 4 tetrahedral units. For x >0.34, a self-organization mechanism occurs in large regions of the nanoscaled-separated parts owing to: (i) a considerable concentration of ethane-like units, (ii) stresses within the regions, and (iii) lower constraints on the backbone network. For samples with x =0.36 and 0.37, each structural unit is stable below the glass-transition temperature, and crystalline regions of GeSe 2 and GeSe appear simultaneously. In the lower Ge-concentration sample, with increasing temperature the local stressed structure relaxes through breaking of Ge–Ge bonds (constituting the ethane-like unit) and acquisition of a nearby Se atom (belonging to Se–Se wrong bonds) to construct corner-shared Ge(Se 1/2 ) 4 -tetrahedral units, and thereafter various crystalline phases of GeSe 2 results depending on the temperature.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Phase-change materials and chalcogenides · Glass properties and applications · Chalcogenide Semiconductor Thin Films

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References (7)

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