Effect of thermal annealing on the blue luminescence of amorphous silicon oxycarbide films
Source abstract
Abstract
Abstract Amorphous silicon oxycarbide (a-SiC x O y ) films that displayed blue luminescence were fabricated using very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) at a temperature of 250 °C. The effects of thermal annealing on the photoluminescence (PL) were investigated. Thermal annealing at 600 °C resulted in a remarkable enhancement in the blue PL, which was clearly observed with the naked eyes in a bright room. The blue PL featured an excitation wavelength independent recombination dynamic on a nanosecond timescale. Neither Si nor SiC quantum dots were present in the annealed films as revealed by transmission electron microscopy. The PL results, combined with an analysis of the chemical bonds present in the films, revealed that the origin of the blue PL was largely due to electron–hole pair recombination through Si-related neutral oxygen vacancy defect centers.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Thin-Film Transistor Technologies · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (32)
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