Large grain μc-Si:H films deposited at low temperature: Growth process and electronic properties

Abstract We have studied structural and electronic properties of μc-Si:H films deposited from SiH 4 + H 2 and SiH 4 + H 2 + Ar gas mixtures. The use of Ar containing gas mixtures for depositions allows us to increase deposition rate by a factor of two and to obtain films with an important fraction of large grains in comparison with SiH 4 + H 2 gas mixtures. Electronic properties of fully crystallized films become more intrinsic with the increase of large grain fraction. Deposition of highly p- and n-doped μc-Si:H layers from the dopant/SiH 4 + H 2 gas mixture at a temperature of 175 °C is possible without any remarkable changes in crystallinity in comparison with undoped films deposited with the same discharge conditions.