Investigation on Sb-rich Sb–Se–Te phase-change material for phase change memory application
Source abstract
Abstract
Sb-rich Sb65Se6Te29 film was investigated for phase change random access memory (PCRAM) application. The crystallization temperature of the Sb65Se6Te29 film is 174 degrees C and the crystalline activation energy is about 2.7 eV. The 10-years' failure temp
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography
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References (11)
Show source-provided references
1. Wuttig · Nat. Mater. · 2007 · 6 · 82410.1038/nmat2009 ↗
2. van Pieterson · J. Appl. Phys. · 2005 · 97 · 08352010.1063/1.1868860 ↗
3. Yamada · J. Appl. Phys. · 1991 · 69 · 284910.1063/1.348620 ↗
4. Yoon · IEEE Electron Device Lett. · 2006 · 27 · 44510.1109/LED.2006.874130 ↗
5. Ryu · Appl. Phys. Lett. · 2008 · 92 · 14211010.1063/1.2898719 ↗
6. Abu-Sehly · Physica B, · 2007 · 390 · 19610.1016/j.physb.2006.08.014 ↗
7. Sivakumaran · J. Phys. D Appl. Phys. · 2005 · 38 · 247610.1088/0022-3727/38/14/026 ↗
8. Yoon · Jpn. J. Appl. Phys. · 2009 · 48 · 10550110.1143/JJAP.48.105501 ↗
9. Nakayama · Jpn. J. Appl. Phys. · 2003 · 42 · 40410.1143/JJAP.42.404 ↗
10. Yin · J. Mater. Res. Rapid Commun. · 2002 · 17 · 220110.1557/JMR.2002.0324 ↗
11. Butler · J. Appl. Phys. · 1977 · 48 · 191410.1063/1.323948 ↗