On the electronic transport properties of bismuth oxide thin films

The study of the electronic transport properties in polycrystalline Bi ₂O ₃ thin films is reported. The samples were prepared by thermal dry oxidation of Bi evaporated films. As prepared films are polycrystalline and β-Bi ₂O ₃ phase is prevailing. The mechanism of electrical conduction in studied films is explained by means of Seto model. Some characteristic model parameters were determined: energy barrier E _b = (0.06–0.22) eV, energy E _t = (0.17–0.46) eV and density N _t = (2.30 × 10 ¹³–1.54 × 10 ⁻¹⁴) cm ⁻² of trapping states.