Effect of UV anneal on plasma CVD low-k film
Source abstract
Abstract
Plasma-enhanced chemical vapor deposition (PE-CVD) low-dielectric (low-k) film was irradiated with ultra violet (UV) light of wavelength 172 nm to enhance mechanical strength and reduce dielectric constant (k value). The thickness measurement method for the UV annealed low-k film is discussed. The effects of UV irradiation on dielectric constant, shrinkage, stress, density, pore size, mechanical strength, and structure are clarified and the mechanism is discussed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Copper Interconnects and Reliability · Semiconductor materials and devices · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (12)
Show source-provided references
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