Influence of doping on physical properties of vitreous As2Se3

Abstract The influence of impurities added in different chemical forms on the physical properties of vitreous As 2 Se 3 is investigated. The impurities used can substantially change the electrical (U, Ga, and Cu), dielectric (U, Tl, Ge, and Cu), thermo-physical (O, Ge, and Tl), or mechanical (B, Hg, In) properties of the glass. Doping with small amounts of oxygen results in a distinct decrease of T g . The most electrically effective impurity is U – at 0.2 mol%; it decreases the conductivity by 10 −3 times and the permittivity by 25%. For electrical applications, Ti seems to be a suitable scavenger; it binds oxygen effectively but influences the electrical conductivity only slightly.