Detailed structural study of low temperature mixed-phase Si films by X-TEM and ambient conductive AFM
Source abstract
Abstract
Microcrystalline silicon (μc-Si:H) thin films prepared by plasma enhanced chemical vapour deposition (PECVD) at 37 °C has been studied by cross-sectional TEM and ambient conductive AFM. We have succeeded in the combined measurement of topography and local conductivity under standard ambient conditions, overcoming the surface native oxide by more sensitive (pA range) current detection. We observed the columnar structure of the amorphous phase in the TEM micrograph and related it to the surface corrugation of the same size detected by AFM.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
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References (19)
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