Density of amorphous Si Ge1− alloys prepared by high-energy ion implantation
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OpenAlex topics: Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Diamond and Carbon-based Materials Research
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References (14)
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1. Dismukes · J. Phys. Chem. · 1964 · 68 · 302110.1021/j100792a049 ↗
2. Custer · Appl. Phys. Lett. · 1994 · 64 · 43710.1063/1.111121 ↗
3. Donovan · Phys. Lett. · 1970 · 32A · 8510.1016/0375-9601(70)90101-5 ↗
4. Williamson · Appl. Phys. Lett. · 1995 · 67 · 22610.1063/1.114675 ↗
5. Baribeau · J. Appl. Phys. · 1988 · 63 · 573810.1063/1.340312 ↗
6. Sigmund · Phys. Rev. · 1969 · B184 · 38310.1103/PhysRev.184.383 ↗
7. Ziegler · 1985
8. Mayer · 1977
9. Ziegler · 1978
10. Santry · Nucl. Instr. Meth. · 1979 · 159 · 52310.1016/0029-554X(79)90681-5 ↗
11. Santry · Nucl. Instr. Meth. · 1980 · 178 · 52310.1016/0029-554X(80)90833-2 ↗
12. van der Kraan · Phys. Rev. · 1983 · B27 · 269310.1103/PhysRevB.27.2693 ↗
13. Friedel · Philos. Mag. · 1955 · 46 · 51410.1080/14786440508520587 ↗
14. Guttman · Solid State Commun. · 1977 · 24 · 21210.1016/0038-1098(77)91199-1 ↗