Spin-coated As33S67−Se thin films: the effect of annealing on structure and optical properties

Abstract The spin-coating method was used for the preparation of amorphous chalcogenide As33S67−xSex films, where x = 0, 17, 33.5, 50 and 67 at.%. The films were stabilized in a vacuum furnace at 70 °C for 10 hours. The compositions of the films, established by Energy-Dispersive X-ray analysis, were similar to the composition of the glass used for the preparation of the solutions. The optical transmission measurements indicated that the optical band gap decreases with increasing Se-content in the films. Raman spectroscopy showed the films structure i.e. As–S bonds at 344 and 376 cm−1, S-rings at 495 cm−1 and appearance of As–Se bonds at 225 cm−1, Se chains at 254 cm−1 and S–Se bonds at 416 cm−1 with increasing Se-content. MIR transmission spectra revealed the presence of solvent residua in spin-coated films i.e. N–H bonds at 3395–3300 cm−1, C–H bonds at 2980–2850 cm−1. Further annealing of the films (150 °C, 0–60 min) caused decrease of N–H and C–H stretching vibration intensities. Raman spectra showed that the annealed films were more structurally ordered in contrast to the as-deposited material. The shift of the films optical absorption edge to lower energies was observed during annealing procedure. Potential application of the films is expected in optical recording and new types of memories.