Photo-induced phenomena in sputtered GeO2 films
Source abstract
Abstract
Abstract Macroscopic and microscopic changes in sputtered GeO 2 films induced by band-gap light from an ArF excimer laser have been studied. When irradiated at 1 atm, the film thickness increases, surface-roughness increases, refractive-index decreases, hygroscopic enhancements, and Ge–O–Ge distance increases. Irradiations in vacuum make these changes smaller or undetectable. These photo-induced changes are discussed from phenomenological and structural viewpoints, and compared with characteristics in GeO 2 –SiO 2 and GeS 2 films.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Photorefractive and Nonlinear Optics · Semiconductor materials and devices · Surface Roughness and Optical Measurements
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (39)
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