Electron spin resonance and optical characterization of defects in microcrystalline silicon
Source abstract
Abstract
Electron spin resonance (ESR), constant photocurrent method (CPM), photothermal deflection spectroscopy (PDS), Raman and IR spectroscopy have been used to measure microcrystalline silicon films. Besides standard defects with a g-value of 2.0055, new defects with a g-value ∼2.0030 have been created during annealing this material. Proportionality between the subgap optical absorption and ESR spin density has been observed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
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References (15)
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