journal article·1996-05

Photoconductive a-GaN prepared by reactive sputtering

S. Nonomura, S. Kobayashi, T. Gotoh, S. Hirata, T. Ohmori, T. Itoh, S. Nitta, K. Morigaki

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Thin-Film Transistor Technologies · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (10)

Show source-provided references
1. Pankove · RCA Rev. · 1971 · 32 · 383
2. Amano · Appl. Phys. Lett. · 1986 · 48 · 35310.1063/1.96549 ↗
3. Tawada · Jpn. J. Appl. Phys. · 1981 · 20 · 21910.7567/JJAPS.20S2.219 ↗
4. Nonomura · Solar Energy Mater. Solar Cells · 1994 · 34 · 54910.1016/0927-0248(94)90084-1 ↗
5. Digler · Phys. Rev. · 1971 · 4B · 1211
6. S. Nonomura, S. Kobayashi, S. Hirata and S. Nitta, Jpn. J. Appl. Phys.
7. Yokomichi · J. Non-Cryst. Solids · 1989 · 114 · 42610.1016/0022-3093(89)90606-6 ↗
8. Griscom · Solid State Commun. · 1974 · 15 · 47910.1016/0038-1098(74)91124-7 ↗
9. Iregems · J. Phys. Chem. Solids · 1973 · 34 · 88510.1016/S0022-3697(73)80090-3 ↗
10. Tanaka · Mater. Sci. Rep. · 1987 · 2 · 710.1016/S0920-2307(87)80003-8 ↗