Deep defect structure and carrier dynamics in amorphous silicon and silicon-germanium alloys determined by transient photocapacitance methods
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Abstract
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Phase-change materials and chalcogenides · Silicon Nanostructures and Photoluminescence
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References (19)
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18. The analysis in terms of the internal quantum efficiency assumed, for example, that the electric field was uniform across the entire device and equal to the applied voltage divided by the film thickness. This certainly is not true for a Schottky barrier device and, in fact, the average electric fields will generally be significantly larger. This will produce an overestimate of the value of (μτ)h that scales with the square of the factor by which the magnitude of the electric field was underestimated.
19. Fortmann · 1990 · 164 · 315