Improvement of carrier injection efficiency in a-SiC p-i-n LED using highly-conductive wide-gap p, n type a-SiC prepared by ECR CVD
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (7)
Show source-provided references
1. Kruangam · Jpn. J. Appl. Phys. · 1985 · 24 · L80610.1143/JJAP.24.L806 ↗
2. Kruangam · J. Non-Crys. Solids · 1985 · 77&78 · 142910.1016/0022-3093(85)90924-X ↗
3. Kruangam · 1986 · 683
4. Kruangam · Optoelectronics Device and Technologies · 1986 · 1 · 67
5. Hattori · 1987
6. Y. Hattori, D. Kruangam, K. Katoh, H. Okamoto and Y. Hamakawa: in this volume.
7. Kruangam · 1987