journal article·1980-01

Electronic and structural properties of plasma-deposited a-Si:O:H - The story of O2

J.C. Knights, R.A. Street, G. Lucovsky

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Transition Metal Oxide Nanomaterials

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References (11)

Show source-provided references
1. Paesler · Phys. Rev. Lett. · 1978 · 41 · 149210.1103/PhysRevLett.41.1492 ↗
2. Knights, J. C. and Street, R. A., unpublished data.
3. Engemann · Appl. Phys. Lett. · 1978 · 32 · 56710.1063/1.90132 ↗
4. Tsai · Phys. Rev. B · 1979 · 19 · 204110.1103/PhysRevB.19.2041 ↗
5. Street · Phys. Rev. B · 1978 · 18 · 188010.1103/PhysRevB.18.1880 ↗
6. Holzenkampfer · J. Non-Cryst. Sol. · 1979 · 32 · 32710.1016/0022-3093(79)90080-2 ↗
7. Noolandi, J., Hong, K. M. and Street, R. A.,, see these proceedings.
8. Tsang · Phys. Rev. B · 1979 · 19 · 302710.1103/PhysRevB.19.3027 ↗
9. Lucovsky, G., Solid. State Comm.
10. Lucovsky · Phys. Rev. B · 1979 · 19 · 206410.1103/PhysRevB.19.2064 ↗
11. Street, R. A. and Biegelsen, D. K., see these proceedings.