Enhanced phase change memory properties of Ge2Sb2Te5 film through the incorporation of GeSe2
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Nonlinear Optical Materials Studies · Chemical and Physical Properties of Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (61)
Show source-provided references
1. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing10.1038/s41578-018-0076-x ↗
2. Materials science and engineering of phase change random access memory10.1080/02670836.2017.1341723 ↗
3. An overview of phase-change memory device physics10.1088/1361-6463/ab7794 ↗
4. Reversible electrical switching phenomena in disordered structures10.1103/PhysRevLett.21.1450 ↗
5. A review of germanium-antimony-telluride phase change materials for non-volatile memories and optical modulators
6. Origin, secret, and application of the ideal phase-change material GeSbTe10.1002/pssb.201200618 ↗
7. Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory10.1063/1.1314323 ↗
8. Signatures of Ge 2Sb 2Te 5 film at structural transitions10.1016/j.jnoncrysol.2012.07.021 ↗
9. L. Perniola, P. Noé, Q. Hubert, S. Souiki, G. Ghezzi, G. Navarro, A. Cabrini, A. Persico, V. Delaye, J. Barnes, E. Henaff, M. Tessaire, E. Souchier, A. Roule, F. Fillot, J. Ferrand, A. Fargeix, F. Hippert, J. Raty, C. Jahan, V. Sousa, G. Torelli, S. Maitrejean, B. De Salvo, G. Reimbold, Ti Impact in C-doped Phase-Change Memories compliant to Pb-free soldering reflow, (2012) 443–446.10.1109/IEDM.2012.6479069 ↗
10. Phase change behaviors of Zn-doped Ge 2Sb 2Te 5 films
11. Direct hexagonal transition of amorphous (Ge2Sb2Te5)0.9Se0.1 thin films10.1063/1.4865198 ↗
12. Crystal structure and microstructure of nitrogen-doped Ge2Sb2Te5 thin film10.1143/JJAP.39.2775 ↗
13. X. Zhou, M. Xia, F. Rao, L. Wu, X. Li, Z. Song, S. Feng, H. Sun, Understanding Phase-Change Behaviors of Carbon-Doped Ge 2 Sb 2 Te 5 for Phase-Change Memory Application, (2014).10.1021/am503502q ↗
14. Carbon-doped Ge 2Sb 2Te 5 phase change material: a candidate for high-density phase change memory application10.1063/1.4757137 ↗
15. A. Redaelli, F. Pellizzer, Semiconductor Memories and Systems, 2022. doi:10.1016/C2019-0-02600-3.10.1016/C2019-0-02600-3 ↗
16. Multistep Crystallization of Ge-Rich GST Unveiled by In Situ synchrotron X-ray diffraction and (scanning) transmission electron microscopy
17. Chemical phase segregation during the crystallization of Ge-rich GeSbTe alloys10.1039/C9TC02302J ↗
18. Phase change behavior in oxygen-incorporated Ge2Sb 2Te5 films10.1063/1.3168551 ↗
19. Investigations of the phase change properties of (Ge2Sb2Te5)(1-x)(GeS2)(x) 0 ≤ x ≤ 0.25 films
20. Chemical bond approach to the structures of chalcogenide glasses with reversible switching properties10.1016/0022-3093(85)90402-8 ↗
21. Reduction of write current with improved thermal stability in GeSe2 doped Sb2Te3 films for phase change memory applications10.1088/1361-6463/ad5605 ↗
22. Improvement of Electrical Properties of the Ge 2 Sb 2 Te 5 Film by Doping Si for Phase-Change Random Access Memory10.1088/0256-307X/23/1/050 ↗
23. Elucidating the phase change memory properties of (GeTe)1-x(GeSe2)x (0 ≤ x ≤ 0.21) films10.1016/j.vacuum.2025.114491 ↗
24. SET and RESET states of As 2 Se 3 doped GeTe 4 bulk glasses probed by Raman spectroscopy
25. E.M. Vinod, K. Ramesh, K.S. Sangunni, A. Ge, Structural transition and enhanced phase, (2015) 1–7. doi:10.1038/srep08050.10.1038/srep08050 ↗
26. Glass transition, topology, and elastic models of Se-based glasses10.1111/jace.19003 ↗
27. Crystallization of Ge-Rich GeSbTe Alloys To cite this version : HAL Id : hal-0385407410.1021/acsaelm.2c00038 ↗
28. Constraint theory, vector percolation and glass formation10.1016/0038-1098(85)90381-3 ↗
29. Evidence concerning the effect of topology on electrical switching in chalcogenide network glasses10.1103/PhysRevB.54.4413 ↗
30. Local order in amorphous Ge2 Sb2 Te5 and Ge Sb2 Te410.1103/PhysRevB.77.035202 ↗
31. Octahedral to tetrahedral bonding transitions in the local structure of phase change optical media Ge2Sb2Se5 xTe5-5 xwith Se doping10.1063/5.0133981 ↗
32. The Maximum in Glass Transition Temperature (T_g) near x= 1/3 in Ge{x}Se{1-x} Glasses
33. Ultra-low Energy Phase Change Memory with Improved Thermal Stability by Tailoring the Local Structure through Ag Doping10.1021/acsami.0c05811 ↗
34. Electrical switching properties and structural characteristics of GeSe-GeTe films10.1039/C8NR07832G ↗
35. Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film
36. Role of vacancies in metal-insulator transitions of crystalline phase-change materials10.1038/nmat3456 ↗
37. Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te510.1038/s42004-019-0114-7 ↗
38. Ni-doped GST materials for high speed phase change memory applications10.1016/j.materresbull.2015.01.016 ↗
39. A. Redaelli, springer, 2018. doi:10.1109/irws.2006.305252.10.1109/IRWS.2006.305252 ↗
40. RSC Advances Titanium-induced structure modi fi cation for thermal stability enhancement of a GeTeTi phase10.1039/C4RA11504J ↗
41. Structural transition and enhanced phase transition properties of Se doped Ge2Sb2Te5 alloys10.1038/srep08050 ↗
42. Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors10.1080/14786437008221061 ↗
43. Optical Properties and Electronic Structure of Amorphous Germanium10.1002/pssb.19660150224 ↗
44. Unveiling the structural origin to control resistance drift in phase-change memory materials10.1016/j.mattod.2020.07.016 ↗
45. Threshold switching in chalcogenideglass thin films
46. Localized States in the Gap of Amorphous Semiconductors10.1103/PhysRevLett.36.1469 ↗
47. Peculiarities of Electrical Switching and Phase Transition Dynamics in Bismuth-Infused Se-Te Chalcogenide Glasses: from Bulk to Thin Film Devices10.1021/acsaelm.4c00314 ↗
48. Anomalous reduction of the switching voltage of Bi-doped Ge 0 . 5 Se 0 . 5 ovonic threshold switching devices
49. Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses10.1103/PhysRevB.78.035308 ↗
50. Bonding Bands, Lone-Pair Bands, and Impurity States in Chalcogenide Semiconductors10.1103/PhysRevLett.28.355 ↗
51. Electrical switching in Sb doped Al23Te77 glasses10.1016/j.jpcs.2017.03.015 ↗
52. The mechanism of memory and threshold switching in (GeTe4)100 − x(As2Se3)x glasses10.1016/j.jnoncrysol.2016.08.044 ↗
53. Materials Science in Semiconductor Processing Explicating the phase evolution in As and Se co-doped Ge 2 Sb 2 Te 5 films for phase change memory10.1016/j.mssp.2025.110095 ↗
54. SiC-Doped Ge2Sb2Te5 Phase-Change Material: a Candidate for High-Density Embedded Memory Application10.1002/aelm.201800083 ↗
55. Structural evolution of Ge 2 Sb 2 Te 5 films under the 488 nm laser irradiation10.1016/j.matlet.2012.08.051 ↗
56. The Raman Spectrum of Amorphous Tellurium10.1002/pssb.2220520229 ↗
57. K.S. Andrikopoulos, S.N. Yannopoulos, A.V. Kolobov, P. Fons, J. Tominaga, Raman scattering study of GeTe and Ge 2 Sb 2 Te 5 phase-change materials, 68 (2007) 1074–1078. doi:10.1016/j.jpcs.2007.02.027.10.1016/j.jpcs.2007.02.027 ↗
58. G.C. Sosso, S. Caravati, R. Mazzarello, M. Bernasconi, Raman spectra of cubic and amorphous Ge 2 Sb 2 Te 5 from first principles, 134201 (2011) 1–8. doi:10.1103/PhysRevB.83.134201.10.1103/PhysRevB.83.134201 ↗
59. Temperature and concentration dependent crystallization behavior of Ge2Sb2Te5 phase change films: tungsten doping effects
60. Amorphous and crystallized Ge-Sb-Te thin films deposited by pulsed laser: local structure using Raman scattering spectroscopy10.1016/j.matchemphys.2012.08.024 ↗
61. Raman spectra and XPS studies of phase changes in Ge 2 Sb 2 Te 5 films10.1088/1009-1963/13/11/033 ↗