Thermal stability and crystallization kinetics of Sb doped InSe alloys for phase change memory applications
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (63)
Show source-provided references
1. Theoretical and experimental parameters of the structure and crystallization kinetics of melt ‑ quenched As 30 Te 64 Ga 6 glassy alloy10.1007/s10904-021-01938-x ↗
2. Electrical switching and thermal behavior of ternary Si15Te85-xBix (0 ≤ x ≤ 2) chalcogenide glasses
3. Crystallization kinetics of Si20Te80−xBix (0 ≤ x ≤ 3) chalcogenide glasses10.1016/j.mseb.2019.05.030 ↗
4. Crystallization kinetics and investigation of electrical properties of indium-incorporated Se80Te15-xSb5Inx (x = 0, 5, 10) quaternary chalcogenide glasses
5. Chalcogenide photonics10.1038/nphoton.2011.309 ↗
6. Reversible electrical switching phenomena in disordered structures10.1103/PhysRevLett.21.1450 ↗
7. Complex Er-doped selenium-based chalcogenides in the far-infrared region: a structural bonding arrangement study10.1088/1402-4896/ac8186 ↗
8. Investigating phase transform behavior in Indium selenide based RAM and its validation as a memory element
9. Improvement in thermal stability and crystallization mechanism of Sm doped Ge2Sb2Te5 thin films for phase change memory applications10.1016/j.jallcom.2021.162316 ↗
10. Characterization of phase-change material using Verilog - A and its validation as a memory element
11. Chalcogenide-nanowire-based phase change memory
12. Indium selenides: structural characteristics, synthesis and their thermoelectric performances10.1002/smll.201400104 ↗
13. Recent progress in 2D layered III–VI semiconductors and their heterostructures for optoelectronic device applications10.1002/admt.201900108 ↗
14. M.D. Sharma, J. Kaur, N. Goyal, Opto-electronic applications of advanced electronic materials : InSe system, (2016) 51–54.
15. A. Soudi, Y. Gu, Electronically driven amorphization in phase-change In 2 Se 3 nanowires, (2012).
16. Study of conduction mechanisms of InSeSb nano-chalcogenide alloys10.1088/1361-648X/ad49fb ↗
17. Controlled crystal growth of indium selenide, In2Se3, and the crystal structures of α-In2Se310.1021/acs.inorgchem.8b01950 ↗
18. Electrically driven reversible phase changes in layered In2Se3 crystalline film10.1002/adma.201703568 ↗
19. Multi-level phase-change memory with ultralow power consumption and resistance drift10.1016/j.scib.2021.07.018 ↗
20. Successive crystallization in indium selenide thin films for multi-level phase-change memory10.1016/j.apsusc.2023.157642 ↗
21. C. Letters, K.I. Hussain, A. Ashour, E.S. Yousef, E.R. Shaaban, Thermal stability and crystallization kinetic of Se-Te-Ag glassy alloys and thick films for electronic devices, 21 (2024) 65–80.10.15251/CL.2024.211.65 ↗
22. Modified chalcogenide glass equations for the activation energy of crystallization10.47852/bonviewJOPR42022177 ↗
23. Compositional dependence of physical parameters of Sb-doped InSe nanochalcogenide alloys
24. Ga-Sb-Se material for low-power phase change memory10.1063/1.3669699 ↗
25. On the non ‑ isothermal crystallization kinetics, glass forming ability and thermal stability of Bi additive Se – Te – Ge alloys10.1007/s10973-023-12271-5 ↗
26. Thermal stability and crystallization kinetics of Er-doped Ge–Sb–Se chalcogenide: a DSC study10.1007/s00339-024-07310-3 ↗
27. Correlation between structural modifications and physical parameters of Sb doped InSe alloys for optoelectronic applications10.1016/j.optmat.2024.116388 ↗
28. Effect of selenium addition on the GeTe phase change memory alloys10.1016/j.jallcom.2012.05.064 ↗
29. Crystallization kinetics of Sn doped Ge20Te80−xSnx (0 ≤ x ≤ 4) chalcogenide glassy alloys10.1016/j.jallcom.2017.06.070 ↗
30. Optical band gap tuning of Sb-Se thin films for xerographic based applications10.1016/j.spmi.2016.08.023 ↗
31. Kinetic parameters of crystallization in glassy Se 100-xSb x alloys
32. Optical band gap study of a-Se and Se-Sb thin films
33. Investigation of Sb65Se35/Sb multilayer thin films for high speed and high thermal stability application in phase change memory10.1007/s10854-018-9706-8 ↗
34. Phase-change optical data storage in GaSb10.1364/AO.26.004772 ↗
35. N. Sharma, S. Sharda, V. Sharma, Thermal analysis of quaternary Ge – Se – Sb – Te chalcogenide alloys, (2015) 213–218. https://doi.org/10.1007/s10973-014-4138-z.10.1007/s10973-014-4138-z ↗
36. Evaluation of glass-forming tendency by means of DTA10.1007/BF01690134 ↗
37. Glass transition phenomena, crystallization kinetics and thermodynamic properties of ternary Se80Te20-xInx (x = 2, 4, 6, 8 and 10) semiconducting glasses: theoretical and experimental aspects10.1016/S0921-5093(00)01027-3 ↗
38. Crystallization study of Sn additive Se-Te chalcogenide alloys10.1007/s10973-011-1579-5 ↗
39. Thermal analysis studies of Ge additive of Se–Te glasses10.1007/s00339-016-9822-3 ↗
40. Glass forming ability criterion
41. Non-isothermal crystallization kinetics of non-crystalline Ge10Se90−xTlx ternary glass alloys10.1016/j.jnoncrysol.2018.05.033 ↗
42. Crystallization process on amorphous GeTeSb samples near to eutectic point Ge15Te8510.1016/j.jnoncrysol.2008.10.020 ↗
43. The role of defects in resistively switching chalcogenides10.3139/146.110276 ↗
44. The effect of scanning rate on glass transition temperature of splat-cooled Te85Ge1510.1016/0025-5416(76)90189-0 ↗
45. Thermal stability and crystallization kinetics of Se-Te-Sn alloys using differential scanning calorimetry DSC study of Se92Te 8-xSnx (x = 0, 1, 2, 3, 4, 5) chalcogenide glasses10.1007/s10973-011-2062-z ↗
46. Calorimetric study of Sb-modified Ge–Se–Te glassy alloys10.1007/s10973-017-6397-y ↗
47. H.E. Kissinger, Variation of peak temperature with heating rate in DTA- Kissinger 1956.Pdf, 57 (1956) 217–221.10.6028/jres.057.026 ↗
48. Dependence of the glass transition temperature on heating and cooling rate10.1021/j100619a008 ↗
49. Kinematical transformations in amorphous selenium alloys used in xerography10.1007/BF00553271 ↗
50. Glass forming ability and thermal stability of some Se-Sb glassy alloys10.1016/j.materresbull.2006.02.024 ↗
51. Effect of Sb substitution on thermal behaviour of Te-Se-Ge glassy system10.1007/s10973-015-4621-1 ↗
52. The effect of indium additive on crystallization kinetics and thermal stability of SeTeSn chalcogenide glasses10.1016/j.physb.2011.01.060 ↗
53. Non-isothermal crystallization kinetic studies on amorphous chalcogenide semiconductors10.1016/0025-5416(82)90110-0 ↗
54. Calorimetric measurements on as-sb-se glasses10.1016/S0022-3093(86)80084-9 ↗
55. Calculation of the Avrami parameters for heterogeneous solid state reactions using a modification of the Kissinger method10.1007/BF01912301 ↗
56. P.K. Jain, Deepika, K.S. Rathore, N.S. Saxena, Phase transformation and crystallization kinetics of Se90In8Sb2 chalcogenide glass, Chalcogenide Lett. 5 (2008) 126–136.
57. Limitation of the Johnson-Mehl-Avrami (JMA) formula for kinetic analysis of the crystallization of a chalcogenide glass10.1016/j.tca.2005.07.005 ↗
58. Non-isothermal crystallization kinetics of ternary Se90Te10-xPbx glasses10.1016/j.jcrysgro.2015.12.004 ↗
59. Kinetic analysis of non-isothermal DSC data. Computer-aided test of its applicability10.1023/A:1012077525661 ↗
60. Kinetic study on C R Y S T a L L I Z a T I O N of glass10.1016/0022-3093(80)90525-6 ↗
61. K. Study, T.C. Analysis, G.K. Matusita, S. Sakka, R. February, K.E.Y. Words, I. introduction, 59 (1981).
62. Kinetics of crystallization of amorphous Cu50Ti50 alloy10.1016/j.jnoncrysol.2004.08.018 ↗
63. Study of non-isothermal crystallization kinetics of Ge20Se70Sn10 chalcogenide glass10.1007/s10973-017-6793-3 ↗