Surface quality and microstructure evolution in fused silica under SF6/Ar reactive ion beam etching

The SF ₆/Ar reactive ion beam etching (RIBE) was proposed to explore the evolution of surface quality, subsurface defects, surface molecular structure, and chemical composition of fused silica. Also, the mechanism of reactive ion beam etching of fused silica surfaces was discussed. The results show that RIBE can maintain the original surface roughness by choosing suitable process parameters. this etching process can suppress the replication and expansion of subsurface defects and the deposition of reactants without bringing obvious contamination. The concentration of structural defects reaches a minimum at an etching depth of about 2 μm. However, further etching may lead to an increase in the chemical structure defects on the surface. The evolution of the intrinsic ring structure demonstrates that most intrinsic defects tend to reorganize into short (Si-O) ring structures. The etching mechanisms of Ar ions were discussed by simulating the stopping power and energy deposition. Phonon dissipation through atomic displacements and atomic vibrations is an important way of energy loss. Phonon vibrations and atomic dislocations induced by nuclear collisions are not only important factors causing the enhancement of electron-phonon coupling but also important causes of surface structural defects. The researches provide a theoretical basis for in-depth understanding of fused silica surface defect repair.