Effect of water on oxidation behavior of KD-II SiC monofilament
Source abstract
Abstract
SiC fiber (SiC f) in SiC f/SiC plays an essential role in load-bearing and high-temperature applications with the presence of water. It is important to explore the high-temperature oxidation process of SiC f with water. KD-II SiC fibers were annealed at 1050 °C and 1350 °C in air and H 2O-O 2-Ar atmospheres for 0.25 h, 1 h, 4 h, and 16 h to explore the effect of water on the evolution of microstructures and mechanical properties. In the air atmosphere, the fiber strength decreases with the increased temperature and time. However, it responds differently in the H 2O-O 2-Ar atmosphere since there is no significant reduction of fiber strength after annealing at 1350 °C compared to 1050 °C. Water can significantly accelerate the oxidation process and results in increased surface defects and roughness, consistent with the continuously decreasing fiber strength. By increasing the temperature to 1350 °C, coalescence between β-SiC crystal and α -SiO 2 (cristobalite) is observed on the oxide scale (silica). As the result, accompanied by the spallation of the oxide surface, the fiber strength after annealing at 1350 °C for 16 h is unexpectedly higher than that at 1050 °C for 16 h in the H 2O-O 2-Ar atmosphere.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced ceramic materials synthesis · Silicon Carbide Semiconductor Technologies · Advanced materials and composites
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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