FT-Raman spectroscopic and electrical investigations of RE3+ doped multi-functional silicate glasses for cathode plating and integrated microelectronic technology

Lanthanide-doped silicate glasses were subjected to structural and temperature-dependent electrical investigations to validate their multi-functionality in the integrated microelectronic industries. Raman-active vibrations around 920 cm ⁻¹ and 1330 cm ⁻¹ confirmed the silicate and phosphate tetrahedra respectively. The Er ³⁺ doped glass demonstrated the highest dielectric constant of 9.21 × 10 ⁵, while Sm ³⁺ infused glass exhibited the lowest dielectric constant of 4.37 × 10 ⁴ at 0.1 Hz and 473 K. The Sm ³⁺ doped glasses are prospective for plating on copper chips in printed circuit boards that necessitate low dielectric constants to minimize propagation delay. The equivalent circuitry fitted for the Nyquist impedance plot of Er ³⁺ doped glass constituted parallel combinations of a resistor and Constant Phase Element (CPE), in series with Warburg diffusion impedance. The CPE approaching a capacitive nature in the Er ³⁺ doped glass could be suggested for cathode plating in batteries, and fabrication of multi-layer dielectric substrates in radio frequency condensers.