Estimating the Switching phenomenon for Se98Te2 and Se96Te2X2 (X=Zn or Cd) Chalcogenide glasses.
Source abstract
Abstract
The switching behavior was investigated for Se 98Te 2 and Se 96Te 2X 2 (X= Zn or Cd) Chalcogenide glasses in thin film form. The thermal evaporation process was used for the preparation of the film samples. I − V curves were investigated in the thickness range (200-670 nm) and temperature range (293-318 K). The I − V curves show a memory switch. The values of threshold voltage (V th) found to decrease with the addition of Zn and Cd to Se 98Te 2 respectively. Also, the threshold voltage ( V t h ) values decrease exponentially with increasing temperature and increase with thickness. The ratio between the threshold voltage activation energy Δ ε t h and dc electrical activation energy Δ E σ for the studied compositions suggests the explanation of the switching process by the electrothermal model. The threshold electric field E t h values were obtained and show an inverse relation with temperature for our studied system. The effect of Cd and Zn addition to Se 98Te 2 on the obtained parameters was also explained.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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