Understanding the complicated crystallization behaviors in Germanium-Tellurides
Source abstract
Abstract
Abstract Crystallization behaviors and configurations of germanium-tellurides (GexTe100-x) at a wide compositional range (12.5 ≤ x ≤ 85) have been investigated. It is found GexTe100-x film exhibits one- or two-step crystallization behavior with a complicated competition between GeTe and Te (or Ge) phases. The composition dependences of crystallization temperature and activation energy have been revealed. They exhibit four singularities at x = 20.4 (GeTe4), x = 33 (GeTe2), x = 49 (GeTe), and x = 22 (Ge22Te78). Based on the method of X-ray photoelectron spectroscopy, the structural sketches for the GexTe100-x glasses that is helpful to understand the evolution of crystallization behavior are built up. It is evident that, the presence of homopolar Te Te and heteropolar Ge Te bonds is the main reason for the structural and thermal stability of Ge-deficient films, and Ge Ge bond in GeGe4 tetrahedron appears when x > 50 and effectively enhances the stability of Ge-rich films.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Crystal Structures and Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
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