Dielectric relaxation of Al/Lu2O3/Al thin film structures from 10 μHz to 10 MHz

Abstract Results of dielectric studies of lutetium sesquioxide layers examined in Al/Lu 2 O 3 /Al thin film sandwiches are reported. The dielectric measurements were carried out in the frequency range 10 −5 –10 7 Hz and for temperatures from 292 K to 500 K. Results are presented as plots of frequency functions: the capacitance, the dielectric loss factor, tan δ ( f ) and also on the complex plane as Cole–Cole plots and Nyquist plots. The influence of the external voltage on C ( U ) and tan δ ( U ) was examined. Experimental data were analyzed taking into account thin insulating Lu 2 O 3 film, near-electrode regions of Al/Lu 2 O 3 and Lu 2 O 3 /Al interfaces and series resistance of electrodes and leads. The parameters of Lu 2 O 3 film, near-electrode regions and resistance of contacts and leads were determined.