journal article·2008-08

Structural analysis of Cd–Te–O films prepared by RF reactive sputtering

F. Caballero-Briones, J.L. Peña, A. Martel, A. Iribarren, O. Calzadilla, S. Jiménez-Sandoval, Á. Zapata-Navarro

Journal of Non-Crystalline Solids· Volume 354· Issue 31
Publisher page

Abstract

Crystalline and microcrystalline Cd–Te–O samples have been obtained by RF reactive sputtering from a CdTe target using N 2 O as oxidant. The growth conditions were substrate temperatures of 323 K, 573 K and 773 K and cathode voltage of −400 V, corresponding to 30 W of forward power. The samples were studied by micro-Raman spectroscopy, X-ray diffraction and optical transmittance. The films are remarkably transparent in the visible range, with transmittances about 88% at 400 nm and band gap energies above the absorption edge of the glass substrates. Although only the samples prepared at 773 K present defined diffraction peaks, the analysis of the Raman spectra indicate that samples prepared at 323 K and 573 K have a defined microstructure indeed. The spectra fitting performed by comparison with pattern compounds demonstrate that Cd–Te–O films are formed of Te–O units similar to those present in metal oxide-doped tellurite glasses, such as TeO 3 and TeO 3 + 1 linked through Cd–O bonds. As the substrate temperature increases the microstructure evolves from a γ-TeO 2 richer state to Cd xTe yO z. In the crystalline sample the main phase identified was CdTeO 3 even though evidence of other phases was observed.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials · Quantum Dots Synthesis And Properties

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