journal article·2009-07

Temperature-induced obliteration of sub-oxide interfaces in amorphous GeO

A. Schacht, C. Sternemann, A. Hohl, H. Sternemann, Ch.J. Sahle, M. Paulus, M. Tolan

Journal of Non-Crystalline Solids· Volume 355· Issue 22-23
Publisher page

Abstract

Abstract The temperature-induced phase separation of native amorphous germanium monoxide, a-GeO, into Ge and GeO2 was studied by measurements of the Ge K-edge employing partial fluorescence yield detection. In the native a-GeO samples a significant amount of sub-oxides was found. This sub-oxide content decreases with increasing annealing temperature. At elevated temperatures the formation of nanocrystals was observed. The results indicate a structure of a-GeO which consists of nanoscaled Ge and GeO2 clusters separated by sub-oxide interfaces.
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Research context

OpenAlex topics: Silicon Nanostructures and Photoluminescence · Thin-Film Transistor Technologies · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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