Raman scattering in amorphous films of In1−xSex alloys
Source abstract
Abstract
Abstract Raman scattering (RS) in amorphous films of In 1− x Se x with 0.67± x ⩾0.38 has been studied in backscattering geometry with the use of a microscope. Recorded RS spectra are revealing a mixed vibrational density-of-states and molecular character. The spectra spread from the Rayleigh line up to 200–250 cm −1 . The bands superimposed on the continua are related to zone center modes of the relevant crystal counterpart, Se–Se or In–In vibrations. The RS spectra suggest the structure of the In 1− x Se x alloys to be the continuous random network built up of In centered tetrahedral clusters with In and Se atoms at the corners. The structure of the Se-rich alloys is similar to 4-2 networks with dominant InSe 4/2 clusters and two-fold coordination of Se bridging atoms. That of the In-rich alloys is expected to resemble 4-3 network with rather strong involvement of In atoms at corner of the In-centered tetrahedral clusters and Se atoms being linked to three In ones.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Glass properties and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (18)
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