Ellipsometry characterization of a-Si:H layers for thin-film solar cells

Abstract In order to determine microscopic structures of hydrogenated amorphous silicon (a-Si:H) layers incorporated in a-Si:H-based thin-film solar cells, the spectroscopic ellipsometry (SE) analysis of a-Si:H layers prepared by plasma-enhanced chemical vapor deposition has been performed. In particular, we have characterized the a-Si:H layers by applying a new dielectric function model that allows the evaluation of the SiH2 bond densities in a-Si:H networks. This model is based on our finding that the a-Si:H dielectric functions in the visible/ultraviolet region vary systematically with the formation of SiH2-clustered microvoids. We have applied this model to estimate the SiH2 content in a-Si:H layers fabricated on glass substrates, on which the characterization of the SiH2 bonding is generally difficult. The validity of the SE analysis has been confirmed from the direct characterization of the SiHn local structures using infrared ellipsometry.