InXGa1-XN films deposited by reactive RF-sputtering

Abstract The low temperature deposition of photoconductive In X Ga 1-X N films was carried out by simultaneous reactive rf- magnetron sputtering. In the films deposited using Ga and In targets, XRD peaks corresponding to wurtzite In X Ga 1-X N were observed. The optical band gap energy decreased from 3.27 eV to 1.63 eV with increasing the In composition ratio X = In/(Ga + In) from 0 to 0.58. The N composition ratio N/(Ga + In) and photosensitivity of the film with the optical band gap energy of 2.09 eV were 0.68 and 1.89, respectively. In order to improve the photosensitivity, GaN and InN targets were used instead of Ga and In targets. The N/(Ga + In) and photosensitivity of the film with the optical band gap energy of 2.08 eV deposited using GaN and InN targets were 0.86 and 252, respectively.