Electrical and optical properties of solution phase deposited As2S3 and As2Se3 chalcogenide thin films: A comparative study with thermally deposited films
Source abstract
Abstract
Abstract In this paper, Arsenic sulfide (As 2 S 3 ) and Arsenic selenide (As 2 Se 3 ) chalcogenide thin films are prepared by solution phase spin coating and thermal evaporation technique. Optical properties (band gap and refractive index) and electrical properties (DC conductivity and Activation Energy) of the deposited films are studied. A comparative study of electrical and optical properties of thermally deposited films and spin coated films has been done. The value of electrical conductivity of As 2 S 3 and As 2 Se 3 solution based thin films increases with annealing temperature and found that beyond 70 °C, its conductivity is higher as compared to the value of thermally deposited thin films at room temperature. The band gap of solution phase spin coated films decrease with annealing temperature whereas refractive index increases and reaches approximately the same value of the thermally deposited thin film at room temperature.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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