Surface relief formation in Ge5As37S58–Se nanomultilayers

For the first time direct one-step relief formation of holographic grating with the use of amorphous chalcogenide nanomultilayers of new composition based on Ge 5 As 37 S 58 –Se was studied. Amorphous Ge 5 As 37 S 58 –Se nanomultilayers were prepared by cyclic thermal vacuum deposition . Optical constants of Ge 5 As 37 S 58 –Se nanomultilayers, Ge 5 As 37 S 58 and α-Se films were obtained from transmission spectra. AFM and Raman investigations were performed for morphology and structural characterization on pointed films. Holographic diffraction gratings with diffraction efficiency of 18% in transmission measured at wavelength λ = 650 nm were directly recorded in one step without etching. High quality of grating sinusoidal relief up to ~ 100 nm groove depth was studied by AFM . • Direct one step surface relief formation in Ge 5 As 37 S 58 –Se nanomultilayer structures. • Raman spectra Se nanolayers shown decreasing of Se 8 rings, increasing helical chains. • Relief formation of nano-layered structures depends on nano-periodicity of multilayers.