Laser spot size dependence of photo-induced crystallization process in amorphous GeSe2 film
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Glass properties and applications · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (8)
Show source-provided references
1. Griffiths · Solid State Commun. · 1981 · 40 · 107710.1016/0038-1098(81)90255-6 ↗
2. Murase · 1987 · 297
3. Inoue · J. Non-Cryst. Solids · 1987 · 95&96 · 51710.1016/S0022-3093(87)80152-7 ↗
4. Murase · 1993 · 47
5. Matsuda · J. Non-Cryst. Solids · 1995 · 192&193 · 52410.1016/0022-3093(95)00402-5 ↗
6. Inoue · Solid State Commun. · 1991 · 79 · 90510.1016/0038-1098(91)90441-W ↗
7. Lax · J. Appl. Phys. · 1977 · 48 · 391910.1063/1.324265 ↗
8. Lax · Appl. Phys. Lett. · 1978 · 33 · 78610.1063/1.90505 ↗