New method of drift mobility evaluation in μc-Si:H, basic idea and comparison with time-of-flight
Source abstract
Abstract
We illustrate problems of measurement of the drift mobility by time-of- flight method on microcrystalline silicon. A new method, based on charge extraction in linearly increasing voltage, is introduced. Simple theory as well as numerical modelling of this new method are presented together with the first experimental results on microcrystalline silicon.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Photonic and Optical Devices
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References (5)
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