Chemical kinetics for film growth in silicon HWCVD

Abstract Resonance enhanced multiphoton ionization spectroscopy coupled with molecular beam technique has been used to measure H and Si atoms produced by the hot-wire induced decomposition of silane. The catalytic decomposition of silane on the hot filament exhibited different temperature distributions between H and Si atoms. A chemical kinetic model starting with Si+SiH4 and H+SiH4 reactions was proposed to explain the chemical kinetic phenomena occurring in the silicon hot-wire chemical vapor deposition (HWCVD). The modeling results suggest that temperature sensitivity of film growth properties is primarily due to the gas composition near the surface.