Topology and chemical order in As Ge Se1−2 glasses: A high-resolution X-ray photoelectron spectroscopy study
Source abstract
Abstract
The evolution of topology and chemical order along the AsxGexSe1 − 2x composition-line within the As–Ge–Se glass-forming region is studied by high-resolution X-ray photoelectron spectroscopy. It is shown that cation–cation bond formation becomes a dominant process for the compositions with x > 0.09. The results explain the peculiarities observed around this composition recently in the temperature-modulated differential scanning calorimetry data. Substitution of two selenium atoms within constituent structural units (pyramids and/or tetrahedra) by corresponding cations explains a second peculiarity point at x > 0.16 compositions observed recently with the above technique. The present observations show segregation of As and then Ge at high concentrations of cations in the system (x > 0.20).
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Glass properties and applications · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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