Preparation of Ge–S–I and Ge–Sb–S–I glasses by plasma-enhanced chemical vapor deposition
Source abstract
Abstract
The glass samples of Ge–S–I and Ge–Sb–S–I systems were synthesized by the plasma-enhanced chemical vapor deposition (PECVD) in a low-temperature non-equilibrium RF-plasma discharge. The vapors of GeI 4, SbI 3 and S were the initial substances. The process was carried out in the flowing quartz reactor at the walls temperature of 350–400 °C and the constant total pressure of 1.9 Torr. The glasses obtained by melting of the solid reaction products were homogenized in the evacuated quartz glass ampoule and they were studied by DSC, X-ray microanalysis, Raman spectroscopy, FTIR and atomic emission spectroscopy.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Glass properties and applications · Mineralogy and Gemology Studies
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